Equipment Overview
This LPE (Liquid, Phase, Epitaxial) thin film crystal manufacturing equipment boasts a delivery record of more than 100 units in Japan. It is composed of a high-precision vertical tube furnace, a rotary elevating drive shaft, and a control unit with excellent temperature control accuracy, enabling highly efficient thin film crystal production.

forte
- Excellent heat equalization characteristics
- High-precision sample axis rotation and elevation drive mechanism
- Can be added to an existing furnace (subject to restrictions).
option
- Inert gas introduction mechanism
- Wet contact by electric signal
- Exhaust cover
- Automatic operation control by computer in accordance with the actual manufacturing process (interrupt manual operation is also possible)
By entering the process contents in advance, the system automatically executes the process with predetermined values for destination, travel speed, rotation state, and rotation speed.
LPE Thin Film Crystal Manufacturing Equipment Specifications | |
Heater capacity | Single-phase 200V 2.3kW x 3 zones |
Heating chamber dimensions Diameter x Height mm |
280 mm dia. x 650 mm H |
Normal operating temperature | 800°C to 900°C |
Maximum temperature | 1000°C |
Temperature distribution | ±2℃ (at stable empty furnace φ100×H200mm space at850℃) |
Temperature fluctuation range | ±0.2℃ (at stable empty furnace, φ100×H200mm space at850℃) |
Heating element | SSS heater |
Furnace core tube | φ220×φ205×L800mm |
LPE furnace Drive unit (sample axis) Specifications | |
Lifting speed | 20 to 300mm/min |
Stopping accuracy | Within ±1mm |
Rotation method | Forward/reverse rotation |
Rotation speed | 20 to 300 rpm (with soft start) |
Rotation Speed Fluctuation Accuracy | Within ±1% FS |